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摘要
The Sr0.95Ba0.05TiO3 (SBT) nanometer film is prepared on the commercially available Pt/TiO2/SiO2/Si substrate by radio-frequency magnetron sputtering. The x-ray diffraction pattern and the scanning electron microscope image of the cross-sectional profile of the SBT nanometer film are depicted. The memristive mechanism is inferred. The mathematical model M(q) = 12.3656 -267.4038|q(t)| is calculated, where M(q) denotes the memristance depending on the quantity of electric charge, and q(t) denotes the quantity of electric charge depending on the time. The theoretical I-V characteristics of the SBT nanometer film are obtained by the mathematical model. The results show that the theoretical I-Vcharacteristics are consistent with the measured I-V characteristics. Moreover, the mathematical model could guide the research on applications of the memristor.
- 出版日期2017-3
- 单位山东科技大学
