摘要
In this article, after a brief introduction to the principles behind atom probe crystallography, we introduce methods for unambiguously determining the presence of crystal planes with in atom probe datasets, as well as their characteristics: location; orientation and interplanar spacing. These methods, which we refer to as plane orientation extraction (POE) and local crystallography mapping (LCM) make use of real-space data and allow for system atic analyses. We present here application of POE and LCM to datasets of pureAl, industrial aluminium alloys and doped-silicon. Data was collected bothin DC voltage mode andlaser-assisted mode(in the latter of which extracting crystallographic informationis known to be more difficult due to distortions). The nature of the atomic planes in both data sets was extracted and analysed.
- 出版日期2015-7