A physical model on electron mobility in InGaAs nMOSFETs with stacked gate dielectric

作者：Huang Y; Xu J P^*; Wang L S; Zhu S Y

来源：Microelectronics Reliability, 2015, 55(2): 342-346.

DOI：10.1016/j.microrel.2014.10.011

• MOSFET
• High-k dielectric
• Mobility

An inversion-channel electron mobility model for InGaAs n-channel metal oxide-semiconductor field-effect transistors (nMOSFETs) with stacked gate dielectric is established by considering scattering mechanisms of bulk scattering, Coulomb scattering of interface charges, interface-roughness scattering, especially remote Coulomb scattering and remote interface-roughness scattering. The simulation results are in good agreement with the experimental data. The effects of device parameters on degradation of electron mobility, e.g. interface roughness, dielectric constant and thickness of high-k layer/interlayer, and the doping concentration in the channel, are discussed. It is revealed that a tradeoff among the device parameters has to be performed to get high electron mobility with keeping good other electrical properties of devices.

• 出版日期2015-2
• 单位华中科技大学