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摘要
Gd2O3 films were prepared on (0001)-oriented AlxGa1-xN (0 <= x <= 0.67) thin film substrates via reactive molecular-beam epitaxy. X-ray diffraction revealed that these films possessed the cubic bixbyite structure regardless of substrate composition and were all 111-oriented with in-plane rotations to account for the symmetry difference between the oxide film and nitride epilayer. Valence band offsets were characterized by X-ray photoelectron spectroscopy and were determined to be 0.41 +/- 0.02 eV, 0.17 +/- 0.02 eV, and 0.06 +/- 0.03 eV at the Gd2O3/AlxGa1-xN interfaces for x = 0, 0.28, and 0.67, respectively.
- 出版日期2014-7-7
