Atomic scale investigations on CdxZn1-xSe quantum dots: Correlation between the composition and emission properties

作者：Benallali H^*; Cremel T; Hoummada K; Mangelinck D; Andre R; Tatarenko S; Kheng K

来源：Applied Physics Letters, 2014, 105(5): 053103.

DOI：10.1063/1.4891635

Atom probe tomography and photoluminescence spectroscopy have been used to study CdxZn1-xSe quantum dots embedded in a ZnSe layer grown on a (001) GaAs substrate. Atom probe tomography analyses show significant cadmium incorporation in the center of the dots surrounded by poor cadmium region. These measurements illustrate that the maximum cadmium concentration in the quantum dots is significantly higher than the concentration estimated by transmission electron microscopy. The composition and size of quantum dots obtained by atom probe tomography have been used to calculate the transition energies including excitonic and strain effects.

• 出版日期2014-8-4
• 单位中国地震局