High performance tetrathienoacene-DDP based polymer thin-film transistors using a photo-patternable epoxy gate insulating layer

作者：Shi, Qiang; Xie, Yingtao; Cai, Shucheng; Lee, Wen-Ya; Bao, Zhenan; Matthews, James R.; Simonton, Kristi L.; Myers, Timothy E.; Bellman, Robert A.; He, Mingqian^*; Fong, Hon Hang

来源：Organic Electronics, 2014, 15(5): 991-996.

DOI：10.1016/j.orgel.2014.01.022

• Gate insulator
• Photo-patternability
• Organic thin-film transistor

High performance organic thin-film transistors (OTFTs) are fabricated on an epoxy based photo-patternable organic gate insulating layer (p-OGI) using a top contact thin-film transistor configuration. This negative tone p-OGI material is composed of an epoxy type polymer resin, a polymeric epoxy cross-linker, and a sulfonium photoacid generator (PAG). Features from p-OGI can be precisely patterned down to similar to 3 mu m via i-line photolithography. In order to evaluate the potential of this epoxy type resin as a gate insulator, we evaluated the dielectric properties of the p-OGI and its gate insulating performance upon fabricating solution processed OTFTs using an organic semiconductor (OSC), namely tetrathienoacene-DPP copolymer (PTDPPTFT4). Results show that the PTDPPTFT4 based OTFTs with this p-OGI exhibit field-effect mobilities up to 1 cm(2) V (1) s (1), indicating the potential of high performance solution processed OTFT based on an epoxy based p-OGI/OSC system.

• 出版日期2014-5
• 单位上海交通大学