Avalanche Photodiodes Based on the AlInAsSb Materials System

作者：Bank Seth R; Campbell Joe C; Maddox Scott J; Ren Min; Rockwell Ann Katheryn; Woodson Madison E; March Stephen D

来源：IEEE Journal of Selected Topics in Quantum Electronics, 2018, 24(2): 3800407.

DOI：10.1109/JSTQE.2017.2737880

• InGaAs/InP
• silicon
• photodiode
• photodetector

We report avalanche photodiodes (APDs) fabricated from high-aluminum-content Al-x In1-x As-y Sb1-y lattice matched to GaSb that is grown within the miscibility gap using a digital alloy approach. The material was initially characterized through a series of Al-x In1-x As-y Sb1-y (x = 0.3, 0.4, 0.5, 0.6, 0.7) p-i-n structures. In order to achieve operation at telecommunications wavelengths, an Al-x In1-x As-y Sb1-y separate absorption, charge, and multiplication APD has been developed. Very low excess noise, as characterized by k similar to 0.01-0.05, has been achieved.

• 出版日期2018-4