Modeling and fabrication of electrically tunable quantum dot intersubband devices

作者：Wu Wei^*; Dey Dibyendu; Memis Omer G; Mohseni Hooman

来源：Applied Physics Letters, 2009, 94(19): 193113.

DOI：10.1063/1.3138135

• lithography
• quantum well devices
• semiconductor device models
• semiconductor quantum dots

We propose an idea of forming quantum dot intersubband transition devices based on lateral electrical confinement on quantum wells. Numerical simulations show that the energy level separation in the structure can be as large as about 50 meV, and with different electric field, the energy levels can be tuned. We also demonstrate the fabrication of a large number of field-induced quantum dots by our super lens lithography technique. We achieved uniform arrays of contacts that are about 200 nm using a conventional UV source of lambda similar to 400 nm.

• 出版日期2009-5-11
• 单位西北大学