Analysis of series and shunt resistance in silicon solar cells using single and double exponential models

作者：Singh Priyanka^*; Ravindra Nuggehalli M

来源：Emerging Materials Research, 2012, 1(1): 33-38.

DOI：10.1680/emr.11.00008

• double exponential
• series resistance
• shunt resistance
• single exponential
• solar cell

Series and shunt resistances in solar cells are parasitic parameters, which affect the illuminated current-voltage (I-V) characteristics and efficiency of cells. Very high values of series resistance (R-s) and very low values of shunt resistance (R-sh) reduce short-circuit current density (J(sc)) and open-circuit voltage (V-oc), respectively. In this study, the analysis of R-s and R-sh for silicon solar cells using single and double exponential models are described. R-s and R-sh for solar cells are determined from its illuminated I-V curves. The pre-exponential constants and ideality factors, I-o and n in single and I-o1, I-o2 and n(1), n(2) in double exponential models are determined. Shunt resistance is nearly the same for both single and double exponential models. However, the series-resistance values are lower when calculated with double exponential model as compared with single exponential model.

• 出版日期2012-2