Direct Current and Microwave Characteristics of Sub-micron AlGaN/GaN High-Electron-Mobility Transistors on 8-Inch Si(111) Substrate

作者：Arulkumaran Subramaniam^*; Ng Geok Ing; Vicknesh Sahmuganathan; Wang Hong; Ang Kian Siong; Tan Joyce Pei Ying; Lin Vivian Kaixin; Todd Shane; Lo Guo Qiang; Tripathy Sudhiranjan

来源：Japanese Journal of Applied Physics, 2012, 51(11): 111001.

DOI：10.1143/JJAP.51.111001

We report for the first time the DC and microwave characteristics of sub-micron gate (similar to 0.3 mu m) AlGaN/GaN high-electron-mobility transistors (HEMTs) on 8-in. diameter Si(111) substrate. The fabricated sub-micron gate devices on crack-free AlGaN/GaN HEMT structures exhibited good pin.-off characteristics with a maximum drain current density of 853 mA/mm and a maximum extrinsic transconductance of 180 mS/mm. The device exhibited unit current-gain cut-off frequency of 28 GHz, maximum oscillation frequency of 64 GHz and OFF-state breakdown voltage of 60 V. This work demonstrates the feasibility of achieving good performance AlGaN/GaN HEMTs on 8-in. diameter Si(111) for low-cost high-frequency and high-power switching applications.

• 出版日期2012-11
• 单位南阳理工学院