Dependence of the electron capture velocity on the quantum-well depth in semiconductor lasers

作者:Sokolova Z N; Bakhvalov K V; Lyutetskiy A V; Pikhtin N A; Tarasov I S; Asryan L V
来源:Semiconductors, 2016, 50(5): 667-670.
DOI:10.1134/S1063782616050225

摘要

Three laser structures with a single strained InGaAs quantum well of different depths and a GaAs or Al0.1Ga0.9As waveguide region are grown by metal-organic chemical vapor deposition. Using the experimentally determined values of the threshold current density and internal differential quantum efficiency, the velocity of electron capture into the quantum well is calculated for each of these structures. It is found that the capture velocity into deep quantum wells is significantly lower than into shallow ones.

  • 出版日期2016-5