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摘要
This paper introduces a new technique of determining the stress in microelectronic materials by combining photoelasticity and Fourier analysis. The approach uses a continuously rotating analyser to determine the photoelastic parameters from a Fourier analysis of the measured emerging light intensity. The principle of operation is discussed and the apparatus is described. An example is demonstrated to illustrate the application of the technique.
- 出版日期1996-1
- 单位华南理工大学
