科研之友
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摘要
A novel modification of our "2T" floating-body/gate DRAM cell is described and, via numerical simulations, shown to yield very long charge data retention times under worst-case conditions, as well as good memory performance (i.e., large signal margin and low operating power). Relatively low voltage operation is enabled, thereby implying good cell reliability as well.
- 出版日期2011-6
