Magnetic properties of Mn(+)-implanted and annealed Si(1-x)Ge(x) thin films grown on p-Si(100) substrates

作者：Kwon Y H; Kang T W; Shon Y; Cho H Y; Jeon H C; Park Y S; Lee D U; Kim T W^*; Fu D J; Fan X J

来源：Solid State Communications, 2008, 147(5-6): 161-164.

DOI：10.1016/j.ssc.2008.05.029

• semiconductor
• impurities in semiconductor

Mn(+)-implanted and annealed Si(1-x)Ge(x) thin films grown on p-Si (100) substrates were formed with the goal of producing (Si(1-x)Ge(x))(1-y)Mn(y) with a high ferromagnetic transition temperature (T(c)). The double-crystal X-ray rocking Curves and transmission electron microscopy images showed that the Mn-implanted and annealed Si(1-x)Ge(x) thin films were single crystalline. The magnetization Curves as functions of the magnetic field clearly showed that ferromagnetism existed in the Mill-implanted and annealed Si(1-x)Ge(x) thin films, and the magnetization Curves as functions of the temperature showed that the T(c) value was above 300 K. These results indicate that the formed (Si(1-x)Ge(x))(1-y)Mn(y) thin films hold promise for potential applications in Si-based spintronic devices operating at room temperature.

• 出版日期2008-8
• 单位武汉大学