Fabrication of multi-layer Bi2Se3 devices and observation of anomalous electrical transport behaviors

作者：Gunasekaran Venugopal^*; Park Goon Ho; Suemitsu Maki; Fukidome Hirokazu^*

来源：Materials Science in Semiconductor Processing, 2017, 68: 128-132.

DOI：10.1016/j.mssp.2017.06.010

• Bismuth selenide
• Current transport
• SCLC
• F-N tunneling
• P-F emission

In this paper, we report on the fabrication of multi-layer bismuth selenide (Bi2Se3) devices by lithography process and their electrical transport characteristics studied at room temperature. The observation of a nonlinear current-voltage characteristic is analyzed with various current transport mechanisms such as Schottky barrier, space-charge limited conduction (SCLC), Fowler-Nordheim (F-N) tunneling and Poole-Frenkel (P-F) conduction. The F-N tunneling via field emission current induced in high-voltage was found to be the dominant conduction mechanism which could responsible for the nonlinear behavior as compared to SCLC and P-F conduction phenomena. The charge traps present in the Bi2Se3 bulk causes SCLC and P-F conduction. A carrier mobility in Bi2Se3 is extracted as similar to 1220 cm(2) V-1 s(-1). Our study further advances the understanding of the fundamental charge transport mechanisms appeared in Bi2Se3 which will be an essential parameter in the development of various electronic applications such as resistive memory switching and sensing devices.

• 出版日期2017-9