摘要

The interface between an organic semiconductor and a dielectric plays an important role in determining the device performance of organic field-effect transistors (OFETs). A uniform ink-jet printed tetrathiafulvalene-tetracyanoquinodimethane (TTF-TCNQ) nanoweb was investigated as the buffer layer between the semiconductor layer and the dielectric in OFETs. Compared to the n-octadecyl triethoxysilane (OTS) modification layer, we observed an increase in the "effective" field effect mobility by as much as several tens of times while maintaining the high on/off ratios in the TTF-TCNQ based device. This work demonstrated that with the advantages of low-cost, high-performance and printability, the TTF-TCNQ nanoweb could serve as an excellent buffer layer for OFETs.

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