科研之友
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摘要
The stress distribution in poly-Si due to two-dimensional CoSi2 patterns was studied by micro-Raman spectroscopy. We found that the stress near the edge of the patterns was different from that in the centre of the patterns. The directions are opposite to each other in these two regions. We also found that smaller or deeper layers of CoSi2 cause larger stress.
- 出版日期1998-6
- 单位北京大学
