Design of a 1.5~3.5 GHz octave bandwidth balanced power amplifier in GaN HEMT technology

作者：Leng Yong Qing; Zhang Li Jun; Zeng Yun^*; Lu Hui; Zheng Zhan Qi; Zhang Guo Liang; Peng Wei; Peng Ya Tao; Guan Jin

来源：Acta Electronica Sinica, 2013, 41(4): 815-820.

DOI：10.3969/j.issn.0372-2112.2013.04.032

• Balanced power amplifiers
• Design and implementations
• Gan hemt transistors
• GaN HEMTs
• Input and outputs
• Measurement results
• Thermal expansion coefficients
• Wideband power amplifier

In this paper, the design and implementation of a broadband balanced power amplifier (PA) using a GaN HEMT transistor is presented. Two Lange couplers are used for a balanced PA configuration, and two multi-section matching networks are used in both input and output ports to improve the bandwidth of PA. The carrier sheet is made of AlSiC whose thermal expansion coefficient is close to silicon's, and the power amplifier operates in a pulse mode in order to reduce the heat dissipated on it. By biasing the amplifier at V_DS=28 V, I_DS=110 mA, the measurement results show 12~13 dB linear gain and 56%~65% drain efficiency in the 1.5~3.5 GHz frequency range. Moreover, an output power higher than 8W is maintained over the band.

• 出版日期2013