A sub 1 V high PSRR CMOS bandgap voltage reference

作者：Chahardori Mohammad^*; Atarodi Mojtaba; Sharifkhani Mohammad

来源：Microelectronics Journal, 2011, 42(9): 1057-1065.

DOI：10.1016/j.mejo.2011.06.010

• Analog integrated circuits
• CMOS bandgap voltage reference
• Low voltage

A Bandgap circuit capable of generating a reference voltage of less than 1 V with high PSRR and low temperature sensitivity is proposed. High PSRR achieved by means of an improved current mode regulator which isolates the bandgap voltage from the variations and the noise of the power supply. A vigorous analytical approach is presented to provide a universal design guideline. The analysis unveils the sensitivity of the circuit characteristic to device parameters. The proposed circuit is fabricated in a 0.13 mu m CMOS technology and operates down to a supply voltage of 1.2 V. The circuit yields 20 ppm/degrees C of temperature coefficient in typical case and 50 ppm/degrees C of temperature coefficient in worst case over temperature range -40 to 140 degrees C, 60 ppm/V of supply voltage dependence and 60 dB PSRR at 1 MHz without trimming or extra circuits for the curvature compensation. The entire circuit occupies 0.027 mm(2) of die area and consumes 134 mu W from a 1.2 V supply voltage at room temperature. Twenty chips are tested to show the robustness of the topology and the measurement results are compared with Monte Carlo simulation and analysis.

• 出版日期2011-9