Nanowire transistor modeling: influence of ionized impurity and correlation effects

作者：Bescond Marc^*; Li Changsheng; Lannoo Michel

来源：Journal of Computational Electronics, 2009, 8(3-4): 382-388.

DOI：10.1007/s10825-009-0279-x

• Nanowire
• Transistors
• Impurity
• Green's function
• Modeling
• Correlation effects
• Image charge potential

This study presents two relevant effects influencing the electronic transport of nanowire transistors. We first focus on the ionized impurity impacts and calculate the current characteristics with a self-consistent three-dimensional (3D) Green's function approach. The results show the effects of both acceptor and donor impurities on the physical electron properties. In particular, we emphasize that the presence of a donor induces different transport phenomena according to the applied gate bias. In a second part, we report a numerical study of the self-energy correction due to correlation effects from dynamic screening of the moving electron in silicon nanowire transistors. This many-body effect, which is not included in the usual Hartree approximation, is then incorporated self-consistently into a non-equilibrium Green's NEGF) code. The results pinpoint the importance of dielectric confinement whose magnitude can not be neglected compared to its quantum counterpart in ultimate nanowire transistors.

• 出版日期2009-10