Superior reliability of high mobility (Si)Ge channel pMOSFETs

作者：Franco J^*; Kaczer B; Toledano Luque M; Roussel Ph J; Cho M; Kauerauf T; Mitard J; Eneman G; Witters L; Grasser T; Groeseneken G

来源：Microelectronic Engineering, 2013, 109: 250-256.

DOI：10.1016/j.mee.2013.03.001

• pMOSFET
• SiGe
• Ge
• NBTI
• Reliability
• Variability

With a significantly reduced Negative Bias Temperature Instability (NBTI), SiGe channel pMOSFETs promise to virtually eliminate this reliability issue for ultra-thin EOT devices. The intrinsically superior NBTI robustness of the MOS system consisting of a Ge-based channel and of a SiO2/HfO2 dielectric stack is understood in terms of a favorable energy decoupling between the SiGe channel and the gate dielectric defects. Thanks to this effect, a significantly reduced time-dependent variability of nanoscale devices is also observed. Other reliability mechanisms such as low-frequency noise, channel hot carriers, and time-dependent dielectric breakdown are shown not to be showstoppers.

• 出版日期2013-9