Many-particle transport in the channel of quantum wire double-gate field-effect transistors with charged atomistic impurities

作者：Albareda G^*; Saura X; Oriols X; Sune J

来源：Journal of Applied Physics, 2010, 108(4): 043706.

DOI：10.1063/1.3455878

One of the most reported causes of variations in electron devices characteristics (coming from the atomistic nature of matter) are discrete doping induced fluctuations. In this work we highlight the importance of accurately accounting for (time-dependent) coulomb correlations among (transport) electrons in the analysis of such fluctuations. In particular, we study the effect of single ionized dopants on the performance of a quantum wire double-gate metal-oxide-semiconductor field-effect transistor, mainly when its lateral dimensions approach the effective cross section of the charged impurities. In this regard, we use a recently developed many-particle semiclassical simulation approach by Albareda et al. [Phys. Rev. B 79, 075315 (2009)] which provides an accurate treatment of electron-electron and electron-impurity interactions (avoiding the mean-field approximation). We reveal the significant impact of the sign and position of the impurity along the transistor channel on the on-current, the threshold voltage, the distribution of the current in the channel cross-section, the transmission probabilities, and the distribution of transit times. We find that neglecting the (time-dependent) coulomb correlations among (transport) electrons can lead to misleading predictions of the previous results.

• 出版日期2010-8-15