High-power blue laser diodes with indium tin oxide cladding on semipolar (20(2)over-bar(1)over-bar) GaN substrates

作者：Pourhashemi A^*; Farrell R M; Cohen D A; Speck J S; DenBaars S P; Nakamura S

来源：Applied Physics Letters, 2015, 106(11): 111105.

DOI：10.1063/1.4915324

We demonstrate a high power blue laser diode (LD) using indium tin oxide as a cladding layer on semipolar oriented GaN. These devices show peak output powers and external quantum efficiencies comparable to state-of-the-art commercial c-plane devices. Ridge waveguide LDs were fabricated on (20 (2) over bar(1) over bar) oriented GaN substrates using InGaN waveguiding layers and GaN cladding layers. At a lasing wavelength of 451nm at room temperature, an output power of 2.52W and an external quantum efficiency of 39% were measured from a single facet under a pulsed injection current of 2.34 A. The measured differential quantum efficiency was 50%.

• 出版日期2015-3-16