Bi-induced p-type conductivity in nominally undoped Ga(AsBi)

作者：Pettinari G^*; Patane A; Polimeni A; Capizzi M; Lu Xianfeng; Tiedje T

来源：Applied Physics Letters, 2012, 100(9): 092109.

DOI：10.1063/1.3690901

• electrical conductivity
• gallium compounds
• III-V semiconductors
• impurity states
• semiconductor epitaxial layers
• valence bands

We report p-type conductivity in nominally undoped GaAs1-xBix epilayers for a wide range of Bi-concentrations (0.6% %26lt;= x %26lt;= 10.6%). The counterintuitive increase of the conductivity with increasing x is paralleled by an increase in the density of free holes by more than three orders of magnitude in the investigated Bi-concentration range. The p-type conductivity results from holes thermally excited from Bi-induced acceptor levels lying at 26.8 meV above the valence band edge of GaAs1-xBix with concentration up to 2.4 x 10(17) cm(-3) at x = 10.6%.

• 出版日期2012-2-27