Nickel silicide formation using multiple-pulsed laser annealing

作者:Setiawan Y*; Lee P S; Pey K L; Wang X C; Lim G C; Chow F L
来源:Journal of Applied Physics, 2007, 101(3): 034307.
DOI:10.1063/1.2433707

摘要

The effect of multiple-pulsed laser irradiation on Ni silicide formation in Ni(Ti)/Si system was studied. A layered structure consisting of both crystalline NiSi2 and Ni-rich Ni-Si amorphous phases with a protective TiOx overlayer was formed after five-pulsed laser annealing at 0.4 J cm(-2). Different solidification velocities caused by a variation in the atomic concentration across the melt have led to the formation of this layered structure. On the other hand, by increasing the number of laser pulses, a continuous layer of polycrystalline NiSi was obtained after a 20-pulsed laser annealing at 0.3 J cm(-2) laser fluence. Its formation is attributed to a better elemental mixing which occurred during subsequent pulses. Enhancement of surface absorption and remelting of the phases formed is proposed as the mechanism governing the continuous NiSi layer formation.

  • 出版日期2007-2-1
  • 单位南阳理工学院