Analysis and Design of Fully Integrated High-Power Parallel-Circuit Class-E CMOS Power Amplifiers

作者：Lee Ockgoo^*; An Kyu Hwan; Kim Hyungwook; Lee Dong Ho; Han Jeonghu; Yang Ki Seok; Lee Chang Ho; Kim Haksun; Laskar Joy

来源：IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS I-REGULAR PAPERS, 2010, 57(3): 725-734.

DOI：10.1109/TCSI.2009.2023944

• Breakdown
• CMOS power amplifier (PA)
• parallel-circuit class-E PA
• parallel combining
• power loss
• transformer

A design methodology for watt-level, fully integrated CMOS power amplifiers (PAs) is presented. It is based on the analysis of the operation and power loss mechanism of class-E PAs, which includes the effects of a finite dc-feed inductance and an impedance matching transformer. Using the proposed approach, a class-E PA with a 2 x 1:2 step-up on-chip transformer was implemented in a 0.18-mu m CMOS technology. With a 3.3 V supply, the fully integrated PA achieves an output power of 2 W and a power-added efficiency of 31% at 1.8 GHz.

• 出版日期2010-3