科研之友
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摘要
A model of resistive random access memory (RRAM) cells aimed at providing an optimal programming/erase scheme in which the timing and biasing can be accurately optimized is proposed and implemented. To expedite technology development with an emphasis on ICs, a predictive model to capture the physical operation of every memory cell is needed. Although a number of compact RRAM models have been developed, this paper further considers the time-dependent reset process and the heat transfer in the conductive filaments. These phenomena are becoming critical in scaled memory cells and need to be carefully addressed. Due to the physical nature of the model, model parameters can be straightforwardly calibrated, relying on limited measurement data. The compact model is implemented using Verilog-A, and it is flexible for different circuit simulators.
- 出版日期2015-7
