A comparative electric and dielectric properties of Al/p-Si structures with undoped and Co-doped interfacial PVA layer

作者：Kaya A^*; Yucedag I; Tecimer H; Altindal S

来源：Materials Science in Semiconductor Processing, 2014, 28: 26-30.

DOI：10.1016/j.mssp.2014.03.015

• Comparing Al/PVA/p-Si and AhCo-PVA/p-Si structures
• Electric and dielectric properties
• Voltage dependent
• Electric modulus
• Ac conductivity

In this study, Al/p-Si structures with undoped and Co-doped PVA interfacial layer called S-1 and S-2 were fabricated and their both electrical and dielectric properties were compared by using 300 kHz capacitance voltage (C-V) and conductance voltage (G/omega-V) measurements at room temperature. Experimental results show that both C and G or dielectric constant (epsilon%26apos;), dielectric loss (epsilon %26apos;%26apos;) values were found as strongly function of applied bias voltage especially at inverse and accumulation bias regions. It was found that the value of R-5 considerably decreases with doping Co metal contrary to conductivity especially in the forward bias region. Such behavior can be attributed to the lack of free charges in pure PVA. The imaginary parr of dielectric modulus (M %26apos;%26apos;) gives Two peaks for S-1 corresponding To enough reverse and forward biases and passes from a minimum at about zero bias. Also, it is clear That the minimum of The M %26apos;%26apos; for S-2 coincides with The maximum of The for S-1 at zero bias. As a result, Co-doped PVA considerable improved The performance of structure. In addition, loss Tangent. (tan delta), ac conductivity (sigma(ac)) and real part. of The electric modulus (M%26apos;) were obtained and compared each other.

• 出版日期2014-12