A New Model for Through-Silicon Vias on 3-D IC Using Conformal Mapping Method

作者:Cheng Tai Yu*; Wang Chuen De; Chiou Yih Peng; Wu Tzong Lin
来源:IEEE Microwave and Wireless Components Letters, 2012, 22(6): 303-305.
DOI:10.1109/LMWC.2012.2195776

摘要

Based on the conformal mapping technique, a novel macro-pi model is proposed to accurately predict the electrical performance of a low pitch-to-diameter ratio (P/D) through-silicon via (TSV) pair on the 3-D IC. The model combines the conventional resistance and inductance (RL) circuit with several parallel capacitances and conductance (CG) circuit. The accuracy-improved CG model rigorously considers the proximity effect. The model can be established by using the derived closed-form formula that is related to geometrical parameters of the TSVs. Compared with the conventional pi-type model, the proposed model can significantly reduce the error of CG value from 25% to 2% with respect to a full-wave simulation, and thus the insertion loss can be well predicted from dc to 40 GHz.

  • 出版日期2012-6