Analysis and optimization of TSV–TSV coupling in three-dimensional integrated circuits

作者：Zhao Yingbo; Dong Gang; Yang Yintang; School of Microelectronics Xidian University Key Laboratory of Ministry of Education for Wide Band Gap Semiconductor Materials; Devices

来源：Chinese Journal of Semiconductors, 2015, 36(04): 176-183.

DOI：10.1088/1674-4926/36/4/045011

• 3D integration
• though silicon vias(TSVs)
• two-port network
• equivalent impedance
• noise coupling reduction

Through silicon via(TSV)-TSV coupling is detrimental to the performance of three-dimensional(3D)integrated circuits(ICs) with the major negative effect of introducing coupling noise.In order to obtain an accurate estimation of the coupling level from TSV-TSV in the early design stage,this paper first proposes an impedancelevel model of the coupling channel between TSVs based on a two-port network,and then derives the formula of the coupling coefficient to describe the TSV-TSV coupling effect.The accuracy of the formula is validated by comparing the results with 3D full-wave simulations.Furthermore,a design technique for optimizing the coupling between adjacent coupled signal TSVs is proposed.Through SPICE simulations,the proposed technique shows its feasibility to reduce the coupling noise for both a simple TSV-TSV circuit and a complicated circuit with more TSVs,and demonstrates its potential for designers in achieving the goal of improving the electrical performance of 3D ICs.

• 出版日期2015-4-15
• 单位西安电子科技大学