A novel high-performance H-gate U-channel junctionless FET

作者:Jin, Xiaoshi*; Yang, Guangrui; Liu, Xi; Lee, Jung-Hee; Lee, Jong-Ho
来源:Journal of Computational Electronics, 2017, 16(2): 287-295.
DOI:10.1007/s10825-017-0966-y

摘要

A novel high-performance H-shape-gate U-shape-channel junctionless FET (HGUC JL FET) is proposed. Compared with the saddle junctionless FET, the proposed HGUC JL FET shows better subthreshold characteristics and higher on-current. Its electrical properties were extensively investigated by studying the influence of variation of design parameters such as the H-gate thickness, the source/drain extension region height, and the gate oxide thickness and material. Compared with conventional structures, the proposed HGUC JL FET shows better performance, especially on scaling down to several nanometers. The reverse leakage current is also effectively restrained and the I-on/I-off ratio greatly improved through design optimization.