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摘要
In2S3 thin films with different thicknesses were deposited on glass substrates using the thermal evaporation method. The as-deposited films were annealed in vacuum at 330 and 400A degrees C for 30 and 60 min. We used Raman spectroscopy and X-ray diffraction to evaluate the effect of thermal treatment on the film structures. Raman active modes that can be classified as 9A1 and 14E modes have been observed in the Raman spectra of the In2S3 thin films. Variations in the Raman shift and bandwidth of different In2S3 thin films reveal the influence of the annealing effect. Results of Raman spectroscopy and XRD show that the annealing effect changes the crystallization phase from tetragonal to cubic at high temperatures.
- 出版日期2014-11
