Annealing-induced change of hydrogen behavior in ZnO nanorods revealed by photoluminescence

作者：Tang, Haiping^*; Li, Hui; He, Haiping

来源：Materials Letters, 2015, 158: 80-83.

DOI：10.1016/j.matlet.2015.05.070

• Semiconductors
• Nanostructures
• Photoluminescence

We carry out a comprehensive photoluminescence (PL) study on hydrothermally grown ZnO nanorods to provide insights into the role of hydrogen impurity in ZnO materials. Annealing at 1223 K greatly modifies the PL properties of the ZnO nanorods, both for the excitonic and deep level emissions. The suppression of excitons bound to H donors as well as enhancement of deep level emission after annealing suggests the removal of H from ZnO lattice. The temperature-dependent behavior of the deep level emissions suggests the formation of V-zn-H-n, complexes.

• 出版日期2015-11-1
• 单位浙江大学; 宝鸡文理学院