Memory effect in the current-voltage characteristic of 8-hydroquinoline aluminum salt films

作者：Tu CH^*; Lai YS; Kwong DL

来源：IEEE Electron Device Letters, 2006, 27(5): 354-356.

DOI：10.1109/LED.2006.872915

• memory device
• organic
• resistance switch

This letter investigated the reproducible bistable resistance switching characteristics of a single-layer organic device based on 8-hydroquinoline aluminum (Alq3) fabricated by spin coating. By controlling the ON-state current through the Alq3 films, it has been possible to achieve various resistance states of the films. In addition, the resistance of the ON-State Alq3 films also affects the threshold current and voltage to switch off the device. The independence of the current-injected direction to erase the ON state implies that the filament theory could elucidate the observed phenomenon. The ratio between low- and high-resistance states can reach five orders of magnitude, which will be a potential material for nonvolatile memory application.

• 出版日期2006-5