System-level variation-aware aging simulator using a unified novel gate-delay model for bias temperature instability, hot carrier injection, and gate oxide breakdown

作者：Liu Taizhi^*; Chen Chang Chih; Cha Soonyoung; Milor Linda

来源：Microelectronics Reliability, 2015, 55(9-10): 1334-1340.

DOI：10.1016/j.microrel.2015.06.008

• BTI
• HCI
• GOBD
• Variation-aware

A framework is proposed to analyze system-level reliability and evaluate the lifetimes of state-of-art microprocessors considering the impact of process-voltage-temperature (PVT) variations and device wearout mechanisms, including bias temperature instability (BTI), hot carrier injection (HCI), and gate oxide breakdown (GOBD). This work studies not only the system performance degradation due to each wearout mechanism individually, but also the performance degradation while all these wearout mechanisms happen simultaneously. A unified gate-delay model is developed to combine PVT variations and the aging effect, and then a statistical timing engine is constructed to analyze performance degradations and system lifetimes.

• 出版日期2015-9