A radiation harden enhanced Quatro (RHEQ) SRAM cell

作者：Peng, Chunyu; Chen, Ziyang; Zhang, Jingbo; Xiao, Songsong; Liu, Changyong; Wu, Xiulong^*; Lin, Zhiting^*

来源：IEICE Electronics Express, 2017, 14(18): 20170784.

DOI：10.1587/elex.14.20170784

• radiation-hardened SRAM
• single event upset
• single-event multiple-node upsets
• static noise margin
• lower power consumption

This paper intends to present a novel radiation-hardened SRAM cell by using the PMOS transistors stacked (each PMOS is split into two same sizes) and changing the inner topological structure on basis of the Quatro-10T. Combined with layout-level optimization design, the 3-D TCAD mixed-mode simulation results show that the novel design has a great single event upset (SEU) immune. Simultaneously, it is found to be tolerant of partial single-event multiple-node upsets (SEMNUs) due to the charge sharing among off-PMOS transistors. In addition, compared with the Quatro-10T, our proposed structure exhibits larger static noise margin (SNM) as well as lower power consumption in 65 nm COMS technology.

• 出版日期2017-9-25
• 单位安徽大学