Direct-bandgap GeSn grown on silicon with 2230 nm photoluminescence

作者：Ghetmiri Seyed Amir; Du Wei^*; Margetis Joe; Mosleh Aboozar; Cousar Larry; Conley Benjamin R; Domulevicz Lucas; Nazzal Amjad; Sun Greg; Soref Richard A; Tolle John; Li Baohua; Naseem Hameed A; Yu Shui Qing

来源：Applied Physics Letters, 2014, 105(15): 151109.

DOI：10.1063/1.4898597

Material and optical characterizations have been conducted for epitaxially grown Ge1-xSnx thin films on Si with Sn composition up to 10%. A direct bandgap Ge0.9Sn0.1 alloy has been identified by temperature-dependent photoluminescence (PL) study based on the single peak spectrum and the narrow line-width. Room temperature PL emission as long as 2230 nm has also been observed from the same sample.

• 出版日期2014-10-13