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摘要
A gated InGaAs/InP single-photon detector based on a novel capacitance balancing technique was demonstrated. The single-photon detector is based on a gated InGaAs/InP avalanche photodioe. A quantum efficiency of 10% at 1550nm was obtained with a dark count probability per gate of 1.82x10(-6) and an afterpulsing probability of 3.6% at a detection rate of 100 MHz. Moreover, compared with traditional capacitance balancing technique, our scheme can reduce dark count probability obviously.
- 出版日期2016
- 单位华中科技大学
