Adjustable built-in resistor on oxygen-vacancy-rich electrode-capped resistance random access memory

作者：Pan, Chih Hung; Chang, Ting Chang^*; Tsai, Tsung Ming; Chang, Kuan Chang; Chu, Tian Jian; Chen, Po Hsun; Chen, Min Chen; Sze, Simon M

来源：Applied Physics Express, 2016, 9(10): 104201.

DOI：10.7567/APEX.9.104201

In this study, an adjustable built-in resistor was observed on an indium-tin oxide (ITO)-capped resistance random access memory (RRAM) device, which has the potential to reduce operating power. Quite notably, the high-resistance state (HRS) current of the device decreased with decreasing current compliance, and a special situation, that is, a gradual change in current always appears and climbs slowly to reach the compliance current in the set process even when the compliance current decreases, was observed. Owing to this observed phenomenon, the device is regarded to be equipped with an adjustable built-in resistor, which has the potential for low-power device application.

• 出版日期2016-10
• 单位中山大学