Amorphous pnictide semiconductor BaZn2As2 exhibiting high hole mobility

作者：Xiao, Zewen; Ran, Fan-Yong; Liao, Min; Ueda, Shigenori; Hiramatsu, Hidenori; Hosono, Hideo; Kamiya, Toshio^*

来源：Applied Physics Letters, 2016, 109(24): 242105.

DOI：10.1063/1.4972039

• ROOM-TEMPERATURE FABRICATION
• OXIDE SEMICONDUCTOR
• ELECTRONIC-STRUCTURE
• OPTICAL-PROPERTIES
• BETA-BAZN2AS2
• BANDGAP

We selected BaZn2As2 as a candidate for a high-mobility p-type amorphous semiconductor because of the valence band maximum formed mainly of widely spread As 4p orbitals. The hole mobility of amorphous BaZn2As2 films increased from 1 to 10 cm(2) V-1 s(-1) as the annealing temperature increased from 300 to 400 degrees C. 500 degrees C annealing started crystallizing the film with the hole mobility similar to 20 cm(2) V-1 s(-1). The optical bandgaps of amorphous BaZn2As2 were 1.04-1.37 eV, which are much larger than that of the crystalline beta-BaZn2As2 (0.23 eV). It is explained by the broken symmetry at the Ba site and the weakening of the As-As direct bonds, which is supported by 6 keV hard X-ray photoemission spectroscopy measurement. Published by AIP Publishing.

• 出版日期2016-12-12