An Epitaxy Transfer Process for Heterogeneous Integration of Submillimeter-Wave GaAs Schottky Diodes on Silicon Using SU-8

作者：Xie Linli^*; Nadri Souheil; Alijabbari Naser; Cyberey Michael E; Bauwens Matthew F; Lichtenberger Arthur W; Barker N Scott; Weikle Robert M II

来源：IEEE Electron Device Letters, 2017, 38(11): 1516-1519.

DOI：10.1109/LED.2017.2756920

• Submillimeter wave
• schottky diodes
• heterogeneous integration
• wafer bonding

This letter describes a new approach for fabricating quasi-vertical submillimeter-wave GaAs Schottky diodes heterogeneously integrated to highresistivity silicon substrates. The new method is robust and eliminates previous processing steps that were prone to result in wafer fracture and delamination. Diodes fabricated with the new process and measured in the 325-500 GHz range using on-wafer RF probes exhibits low parasitic capacitance and series resistance, achieving device characteristics comparable to the prior state-of-the-art submillimeter-wave diodes.

• 出版日期2017-11