摘要

The microstructures and electrical properties of p-type quaternary Zn(x)Bi0.5Sb1.5-xTe3 (x=0.05 similar to 0.4) alloys through substitution of Zn for Sb, fabricated by spark plasma sintering technique, were investigated. The results revealed that the crystal constants are directly related to the Zn content, i.e. free carrier concentration (holes) that is critical to determine the electrical properties The electrical conductivity (sigma) of 2.5 x 10(4) Omega(-1).m(-1) for the alloy ZnxBi0.5Sb1.5-xTe3 (x=0.05) was obtained near room temperature, being about 1.35 times that of ternary Bi0.5Sb1.5Te3 alloy. The power factor (p) of 1.65 x 10(-3) W.m(-1).K-2 was achieved near room temperature, whilst that of typical ternary Bi0.5Sb1.5Te3 alloy is 1.35 x 10(-3) W.m(-1).K-2.

  • 出版日期2006-9
  • 单位宁波工程学院