A comparative analysis of the mechanisms of pinning of a domain wall in a nanowire

作者：Ivanov A A^*; Orlov V A

来源：Physics of the Solid State, 2011, 53(12): 2441-2449.

DOI：10.1134/S1063783411120079

A comparative analysis of the influence of random fluctuations of the crystallographic anisotropy and surface roughnesses on the pinning of a domain wall in a nanowire has been performed in the framework of the model of a polycrystalline nanowire. The initial magnetization curve and the coercive force for these mechanisms of pinning have been calculated. A criterion has been formulated according to which surface inhomogeneities of the nanowire play the key role in the process of pinning of a domain wall. The analytical results obtained have been verified using computer simulation.

• 出版日期2011-12