Fabrication and characterization of In0.83Al0.17N based MSM visible photodiode

作者：Afzal Naveed^*; Devarajan Mutharasu

来源：The European Physical Journal - Applied Physics, 2016, 76(1): 10101.

DOI：10.1051/epjap/2016160240

In this work, we report on the growth of In0.83Al0.17N film on p-type Si (1 1 1) substrate for metal-semiconductor-metal (MSM) photodiode application. The film was synthesized by reactive magnetron co-sputtering technique on Si (1 1 1) substrate in Ar and N-2 mixture at 300 degrees C. The X-ray diffraction analysis revealed (0 0 2) oriented diffraction peak corresponding to nanocrystalline InAlN. The band gap of In0.83Al0.17N film was estimated from UV-vis reflectance measurement and it was found to be 2.38 eV. To fabricate In0.83Al0.17N based MSM photodiode, Pt contacts were deposited on the film through RF magnetron sputtering. Upon exposure to 520 nm light, the Pt/In0.83Al0.17N/Pt photodiode displayed a sharp rise in the value of current. The photodiode exhibited a high sensitivity (4.8x10(3)) and current gain (48.1) at a bias voltage of 5 V. The response and recovery time were calculated to be 0.62 and 0.63 s respectively. The results of present work demonstrate that the sputtered grown InAlN film is a promising material for the MSM photodiode application.

• 出版日期2016-10