Near interface traps in SiO2/4H-SiC metal-oxide-semiconductor field effect transistors monitored by temperature dependent gate current transient measurements

作者：Fiorenza Patrick; La Magna Antonino; Vivona Marilena; Roccaforte Fabrizio

来源：Applied Physics Letters, 2016, 109(1): 012102.

DOI：10.1063/1.4955465

<jats:p>This letter reports on the impact of gate oxide trapping states on the conduction mechanisms in SiO2/4H-SiC metal-oxide-semiconductor field effect transistors (MOSFETs). The phenomena were studied by gate current transient measurements, performed on n-channel MOSFETs operated in “gate-controlled-diode” configuration. The measurements revealed an anomalous non-steady conduction under negative bias (VG &amp;gt; |20 V|) through the SiO2/4H-SiC interface. The phenomenon was explained by the coexistence of a electron variable range hopping and a hole Fowler-Nordheim (FN) tunnelling. A semi-empirical modified FN model with a time-depended electric field is used to estimate the near interface traps in the gate oxide (Ntrap ∼ 2 × 1011 cm−2).</jats:p>

• 出版日期2016-7-4