A new two-dimensional TCAD model for threshold instability in silicon carbide MOSFETs

作者：Kikuchi Takuo^*; Ciappa Mauro

来源：Microelectronics Reliability, 2013, 53(9-11): 1730-1734.

DOI：10.1016/j.microrel.2013.07.031

Threshold voltage instability is a main reliability issue preventing the wide use of silicon carbide MOSFETs power devices. In this paper, a novel two-dimensional TCAD model based on trap-assisted tunneling is proposed to simulate quantitatively the trapping kinetics, the short/long-term degradation behavior, and the recovery in SiC MOSFETs submitted to positive gate bias stress. After calibration, the new model has been applied to a typical n-channel 4H SiC MOSFET with a 50 nm thick gate oxide submitted to stress, recovery, and characterization phases. The obtained results are in excellent agreement with the experimental data reported in literature. Furthermore, the model has been shown to provide deep insight into microscopic properties and spatial charge distributions, which cannot be accessed by the existing one-dimensional theoretical models.

• 出版日期2013-11