n-Type Nanocrystalline-FeSi2/p-Type Si Heterojunction Photodiodes Prepared at Room Temperature

作者：Shaban Mahmoud^*; Kawai Kenji; Promros Natha****; Yoshitake Tsuyoshi

来源：IEEE Electron Device Letters, 2010, 31(12): 1428-1430.

DOI：10.1109/LED.2010.2078793

• Heterojunctions
• iron disilicide
• photodiodes

n-Type nanocrystalline-FeSi2/p-type Si hetero-junctions were prepared at room temperature by means of a facing target direct-current sputtering method. The current density-voltage (J-V) characteristics of the devices fabricated were investigated in the temperature range of 77-300 K. At a wavelength of 1.31 mu m, the photodiodes exhibited a room-temperature responsivity of 110 mA/cm(2) and a detectivity of 2.7 x 10(8) cm root Hz/W, which was improved to 1.5 x 10(10) cm root Hz/W at 77 K. The results profile an attractive low-cost near-infrared photodiode suitable for large-area optoelectronics.

• 出版日期2010-12