A note on the reactions in the Ti-Ge system

作者：Pelleg Joshua^*; Eliahu Reut; Barkai Assia; Levi George

来源：AIP Advances, 2012, 2(3): 032185.

DOI：10.1063/1.4757117

Formations of germanides in thin films of the Ti-Ge system were investigated by XRD after furnace annealing for 1 hour. Ti6Ge5 seems to be the first phase formed while TiGe2 is the end phase with the lowest resistivity. The existence of the phase Ti5Ge3 was confirmed which forms at higher temperatures than Ti6Ge5. The presence of a thin TiO2 layer was observed by TEM. Which of the phase exists or is missed depends on composition of the constituents comprising the film, their thickness and temperature of reaction. Three phases are observed to coexist on the Ge substrate, which are Ti5Ge3, Ti6Ge5 and TiGe2. A schematic suggestion is presented for explaining the coexistence of two or more phases. The concept of formation and coexistence of two phases at lower temperatures is also proposed.

• 出版日期2012-9