A new high voltage SOI LDMOS with triple RESURF structure

作者：Hu Xiarong^*; Zhang Bo; Luo Xiaorong; Yao Guoliang; Chen Xi; Li Zhaoji

来源：Chinese Journal of Semiconductors, 2011, 32(7).

DOI：10.1088/1674-4926/32/7/074006

• Buried layer
• Buried oxide layers
• Depletion layer
• Doping concentration
• Double RESURF
• Drift regions
• Electric field distributions
• New high
• On-resistance
• P-layer
• P-type
• REBULF
• SOI devices
• SOI LDMOS
• triple resurf
• Vertical electric fields

A novel triple RESURF (T-resurf) SOI LDMOS structure is proposed. This structure has a P-type buried layer. Firstly, the depletion layer can extend on both sides of the P-buried layer, serving as a triple RESURF and leading to a high drift doping and a low on-resistance. Secondly, at a high doping concentration of the drift region, the P-layer can reduce high bulk electric field in the drift region and enhance the vertical electric field at the drain side, which results in uniform bulk electric field distributions and an enhanced BV. The proposed structure is used in SOI devices for the first time. The T-resurf SOI LDMOS with BV D 315 V is obtained by simulation on a 6 μm-thick SOI layer over a 2 μm-thick buried oxide layer, and its Rsp is reduced from 16.5 to 13.8 mΩcm2 in comparison with the double RESURF (D-resurf) SOI LDMOS. When the thickness of the SOI layer increases, T-resurf SOI LDMOS displays a more obvious effect on the enhancement of BV 2/Ron. It reduces Rsp by 25% in 400 V SOI LDMOS and by 38% in 550 V SOI LDMOS compared with the D-resurf structure. ? 2011 Chinese Institute of Electronics.

• 出版日期2011
• 单位电子科技大学