Measurement of strong photon recycling in ultra-thin GaAs n/p junctions monolithically integrated in high-photovoltage vertical epitaxial heterostructure architectures with conversion efficiencies exceeding 60%

作者：Proulx F; York M C A; Provost P O; Ares R; Aimez V; Masson D P; Fafard S^*

来源：Physica Status Solidi-Rapid Research Letters, 2017, 11(2): 1600385.

DOI：10.1002/pssr.201600385

• photovoltaics
• III-V semiconductors
• p-n junctions
• GaAs
• heterostructures
• photon recycling

Photon-recycling effects are studied experimentally in photovoltaic power converting III-V semiconductor devices designed with the vertical epitaxial heterostructure architecture (VEHSA). The responsivity of VEHSA structures with multiple thin GaAs n/p junctions is measured for various optical input powers and for different wavelength detuning values with respect to the peak of the spectral response. While the detuning of the optical excitation decreases the external quantum efficiency and the responsivity at low input powers, this study demonstrates that at high optical intensities, a large fraction of the performance can be recovered despite significant detuning values. The photon coupling effects therefore broaden the spectral range for which the VEHSA devices convert high-power optical inputs with high efficiencies into an electrical output having a preset voltage. The devices exhibit a near optimum responsivity of up to 0.645 A/W for tuned excitation conditions or at high optical intensities for spectral detuning values of up to similar to 25 nm and corresponding to an external quantum efficiency of similar to 94%. Efficiencies of 62.0% and 61.8% have been obtained for current-matched excitations and for a detuning of >10 nm, respectively. An output power of 5.87 W is reported and an open circuit voltage enhancement of 92 meV per n/p junction is measured compared to a device with a side by side planar architecture.

• 出版日期2017-2